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Advanced Technical Information
PolarHVTM Power MOSFET
Electrically Isolated Tab, N-Channel Enhancement Mode, Avalanche Rated
IXTC 26N50P
VDSS = 500 V = 13 A ID25 RDS(on) = 260 m
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C
Maximum Ratings 500 500 20 30 13 78 26 40 1.0 10 100 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C V~ N/lb g Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<30pF) Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers
G = Gate S = Source D = Drain G D S
ISOPLUS220TM (IXTC) E153432
Isolated Tab
1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, t = 1, leads-to-tab Mounting Force
300 2500 11..65/2.5..15 2
Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C
Characteristic Values Min. Typ. Max. 500 2.5 5.0 100 25 250 260 V V nA A A m
AC motor control Advantages Easy assembly Space savings High power density
VGS = 10 V, ID = IT Pulse test, t 300 s, duty cycle d 2 %
(c) 2004 IXYS All rights reserved
DS99227(10/04)
IXTC 26N50P
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 20 28 3600 VGS = 0 V, VDS = 25 V, f = 1 MHz 380 48 20 VGS = 10 V, VDS = 0.5 VDSS, ID = IT RG = 4 (External) 25 58 20 96 VGS= 10 V, VDS = 0.5 VDSS, ID = IT 20 45 S pF pF pF ns ns ns ns nC nC nC 1.25 K/W 0.21 K/W
ISOPLUS220 Outline
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS= 10 V; ID = T , pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 26 78 1.5 400 5.0 A A V ns C
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A -di/dt = 100 A/s VR = 100 V
Note: Test Current IT = 13A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692
IXTC 26N50P
Fig. 1. Output Characteristics @ 25C
30 27 24 21 VGS = 10V 7V 6V 50 40 6V 30 60 VGS = 10V 7V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
18 15 12 9 6 3 0 0 1 2 3 4 5 6 7 8 5V 4.5V 5.5V
I D - Amperes
20 5.5V 10 5V
0 0 3 6 9 12
V D S - Volts Fig. 3. Output Characteristics @ 125C
30 27 24 VGS = 10V 7V 6V 5.5V 3.1 2.8 VGS = 10V
V D S - Volts
15
18
21
24
27
30
Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
I D - Amperes
21 18 15 12 9 6 3 0 0 2 4 6 8 10 12
R D S ( o n ) - Normalized
2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 I D = 13A I D = 26A
5V
4.5V
14
16
18
20
-50
-25
0
25
50
75
100
125
150
V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID
3.4 3 VGS = 10V TJ = 125C 27 24 21 2.6 2.2 1.8 1.4 1 0.6 0 5 10 15 20 25 TJ = 25C
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
R D S ( o n ) - Normalized
I D - Amperes
30 35 40 45 50 55 60
18 15 12 9 6 3 0
I D - Amperes
-50
-25
TC - Degrees Centigrade
0
25
50
75
100
125
150
(c) 2004 IXYS All rights reserved
IXTC 26N50P
Fig. 7. Input Adm ittance
40 35 30 55 50 45 40 TJ = -40C 25C 125C
Fig. 8. Transconductance
g f s - Siemens
4.5 5 5.5 6 6.5
I D - Amperes
25 20 15 10 5 0 3.5 4
35 30 25 20 15 10 5 0 0
TJ = 125C 25C -40C
5
10
15
20
25
30
35
40
45
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
70 60 50 10 9 8 7 VDS = 250V I D = 13A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
VG S - Volts
TJ = 125C TJ = 25C 0.4 0.5 0.6 0.7 0.8 0.9 1
40 30 20 10 0
6 5 4 3 2 1 0
V S D - Volts Fig. 11. Capacitance
10000
0
10
20
30
40
50
60
70
80
90
100
Q G - nanoCoulombs
Fig. 12. For w ar d-Bias Safe Ope r ating Ar e a
100 R D S(on) Lim it
Capacitance - picoFarads
C iss 1000
25s
I D - Amperes
10
100s 1m s 10m s
C oss 100
1 DC TJ = 150C
f = 1MHz C rss
TC = 25C 0.1
40
10 0 5 10 15 20 25 30 35
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
1000
V D S - V olts
IXTC 26N50P
Fig. 13. Maximum Transient Therm al Resistance
10.00
R ( t h ) J C - C / W
1.00
0.10
0.01 0.1 1 10 100 1000
Pulse Width - milliseconds
(c) 2004 IXYS All rights reserved
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